发明名称 AVALANCHE PHOTO DIODE
摘要 PROBLEM TO BE SOLVED: To simultaneously achieve a low dark current, a low noise, and a wide band in an avalanche photo diode that plays an important role in optical communication technique. SOLUTION: A distortion compensation superlattice multiplication layer 103 is used as a superlattice multiplication layer, thus thinning the film thickness of the superlattice multiplication layer without decreasing a multiplication rate and increasing the dark current, quickening a response speed, and, in addition, reducing an operating voltage.
申请公布号 JP2001332759(A) 申请公布日期 2001.11.30
申请号 JP20010044738 申请日期 2001.02.21
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 SUZUKI CHIYOUJITSURIYO
分类号 H01L27/14;H01L31/0352;H01L31/107;(IPC1-7):H01L31/107 主分类号 H01L27/14
代理机构 代理人
主权项
地址
您可能感兴趣的专利