| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can realize a multi-chip module while improving reliability, and its manufacturing method. SOLUTION: After a rear side protection film 11 is formed in a back side of wafers 1-1 to 1-3, discrete dicing treatment is carried out. After the semiconductor chips A, B, C, subjected to discrete dicing treatment are disposed again to realize a multi-chip module, a first surface protection film 3 which covers a surface and a side of the module and fills up a chip clearance are formed. After re-wiring 5, a post 6 and a second surface protection film 7 are provided, a semiconductor device 10, which is made a multi-chip module by dicing again along a cut line CL to leave the surface protection film 3 of a prescribed thickness in a cut surface, is formed. Therefore, rear, front and side surfaces of the semiconductor device 10 are entirely covered with the protection films 3, 11, thus improving reliability. |
