LASER ANNEALING METHOD AND METHOD OF MANUFACTURING THIN FILM TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide an apparatus and method for manufacturing polycrystalline silicon for a thin film transistor device for use in a liquid crystal display pixel switch on a mass production basis with a good yield. SOLUTION: In the laser annealing apparatus and the method for manufacturing a thin film transistor wherein a pulse laser beam irradiates a glass substrate having an amorphous silicon semiconductor thin film deposited thereon while moving the glass substrate to thereby form a polycrystalline silicon semiconductor; a laser beam L to irradiate glass substrate O has a rectangular cross-sectional shape, the central line of the beam in its longitudinal direction is tilted by an angleθwith respect to a straight line defined by arranging zones corresponding to pixels of the glass substrate to be moved, thereby providing polycrystalline silicon having a uniform grain size.