| 摘要 |
PROBLEM TO BE SOLVED: To provide an IGBT capable of holding a low on voltage without increasing a switching loss in a non-punch through type IGBT having a trench gate. SOLUTION: In the non-punch through type IGBT having the trench gate, an impurity concentration of a collector layer 9 is raised, hence an excess carrier at a collector side is increased as compared with a drift layer 7, a voltage drop in this part is held low, while the excess carrier at an emitter side of the layer 7 is held low, a loss at a switching time is thereby reduced and hence a low on-voltage and a low switching loss are resultantly realized.
|
