| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device wherein a leakage current in an interface between a surface silicon layer and a buried oxide film is not generated by potential difference between the surface silicon layer and a retaining substrate in an LDD transistor formed on a SOI substrate, and to provide a manufacturing method of the device. SOLUTION: In this semiconductor device and its manufacturing method, a leakage blocking layer 13 which has the same conductivity as the surface silicon layer 3 and high impurity concentration is formed below a source region 7.
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