MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device that can reduce deterioration in transistor and ferroelectric characteristics. SOLUTION: When a reaction gas is supplied to a chamber, at the same time, a high-frequency voltage is applied for generating plasma, and a silicon nitride film 18 is formed as the final protection film of a semiconductor substrate 6, power density when the high-frequency voltage rises is set larger than 1.75 W/sec.cm2 for applying.