发明名称 SILICON ELECTRODE AND HIGH FREQUENCY CONTACT POINT SHEET AS WELL AS MANUFACTURING METHOD OF SILICON ELECTRODE
摘要 PROBLEM TO BE SOLVED: To provide a high frequency contact point sheet to conduct a performance test of IC elements of ultrahigh frequency with high accuracy. SOLUTION: The high frequency contact point sheet 8 is equipped with an insulation sheet 8a, a through hole 8b penetrating from a surface of one side through to the surface of the other side of the sheet 8a, plural silicon electrodes 8d which supports a central part 10 formed of a silicon plate and equipped with an electrode protruding part 8e on a surface of one side against an outer circumferential part 9 by at least one beam part 11, and which covers an opening of the through hole 8b, and in which the electrode protruding part 8e is equipped so as to be positioned in the opposite side of this through hole 8b, and an electro-conductive part 8c equipped at the side face of the through hole 8b in order to make an electric contact between the silicon electrodes 8d equipped in the state that they pinch the through hole 8.
申请公布号 JP2001332323(A) 申请公布日期 2001.11.30
申请号 JP20000153199 申请日期 2000.05.24
申请人 ANRITSU CORP 发明人 KOTADO SETSUO;TSUGANE HIRONORI;HAYAKAWA SATOSHI
分类号 G01R31/26;G01R1/06;G01R1/073;H01L21/66;H01R11/01;(IPC1-7):H01R11/01 主分类号 G01R31/26
代理机构 代理人
主权项
地址