| 摘要 |
PROBLEM TO BE SOLVED: To increase the operation speed of a semiconductor IC, reduce power consumption both when the IC is active and when it is in stand-by, and reduce the chip area. SOLUTION: The substrate potentials (VBP, VBN) of MIS transistors are unified between a first logic gate (1) which operates from a first potential set (VDDL, VSSL) having a relatively small potential difference, and a second logic gate (2) which operates from a second potential set (VDDH, VSSH) having a relatively large potential difference, The second logic gate has a relatively high driving performance and the first logic gate can operate on relatively low power. The MIS transistors have their threshold voltages increased and decreased when the substrates are biased in a reverse direction and in a forward direction, respectively, Since the substrate potentials of the MIS transistors of the first and second gates are unified, MOS transistors for both logic gates can be formed in a common well region even in the case that the substrates are biased differently in the first and second gates.
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