| 摘要 |
PROBLEM TO BE SOLVED: To offer a large scale integrated circuit device provided with a memory cell composed of a highly integrated ferrodielectric FET. SOLUTION: After gate electrodes 14 and gate insulating films 13 of a pMOSFET, an nMOSFET and a ferrodielectric FET are formed individually, source regions 15 and drain regions 16 of the nMOSFET and the ferrodielectric FET are formed separately with the formation of source regions 17 and drain regions 18 of the pMOSFET by ion implantation of impurities. On a first interlayer insulating film 20, an intermediate electrode 22 which is connected to the gate electrode 14 of the ferrodielectric FET, a ferrodielectric film 23 and a control gate electrode 24 are formed. On a second interlayer insulating film 30, a first wiring 33a connected to the control gate electrode 24 and a second wiring 33b connected to the intermediate electrode 22 of the ferrodielectric FET are arranged, thereby forming a wiring layer 33 connected to the gate electrodes 14 of the CMOS.
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