发明名称 |
APPARATUS AND METHOD FOR CONTROLLING WAFER ENVIRONMENT BETWEEN THERMAL CLEANING AND HEAT TREATMENT |
摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus and a method for controlling the wafer temperature and environment. SOLUTION: The apparatus 10 of this inventive comprises an RTP chamber (20) having an inert or reducing environment. The RTP chamber (20) contains a pedestal 24 for holding a single wafer 16, and a heater unit 22 disposed to heat the single wafer uniformly at a high rate. The apparatus 10 further comprises a cooling chamber 30 having a reducing or inert environment and disposed contiguously to the RTP chamber to open selectively thereto, a first loading chamber 40 having an inert or reducing environment and containing a cassette 44 for holding one or a plurality of wafers, and a heat treatment chamber 50, e.g. an LPCVD furnace, disposed to execute heat treatment of a wafer in the cassette. Wafer handlers 80-83 for carrying a wafer is subjected to temperature control.
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申请公布号 |
JP2001332602(A) |
申请公布日期 |
2001.11.30 |
申请号 |
JP20010073029 |
申请日期 |
2001.03.14 |
申请人 |
INTERNATL BUSINESS MACH CORP <IBM> |
发明人 |
BALLANTINE ARNE W;PETER A EMI;WALTER J FREY;MICHAEL J GYANBERO;NINA GAG;BYONJU PAKU;DONALD L WILSON |
分类号 |
B65G49/00;B65G49/07;C23C16/44;C23C16/54;H01L21/00;H01L21/205;H01L21/677;(IPC1-7):H01L21/68 |
主分类号 |
B65G49/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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