| 摘要 |
PROBLEM TO BE SOLVED: To properly ashing-process resist where a transformed layer is formed by the implantation of high dozed ions with high throughput. SOLUTION: A microwave transmission window member 4 installed to seal the opening part of a vacuum container 2 for introducing a microwave into the vacuum container 2, a substrate holding stand 3 holding a substrate to be processed 20 during a processing in the vacuum container 2 and heating it, and an inner wall heater 19 heating the inner wall of the vacuum container 2 in a part corresponding to a plasma generation area 18 between the substrate holding stand 3 and the microwave transmission window member 4 to the temperature of a degree where the scattered matter of resist attached to the inner wall is removed by plasma, are installed. |
