发明名称 BIPOLAR TRANSISTOR AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To increase effective emitter area while fineness in design rules is being maintained. SOLUTION: On an emitter region 10, a first insulating film 4 having a first opening, and a second insulating film 6 having a second opening being smaller than the first one on the first opening are provided, and an emitter electrode material 9 where impurities are doped is buried in the first and second opening parts.
申请公布号 JP2001332561(A) 申请公布日期 2001.11.30
申请号 JP20000150271 申请日期 2000.05.22
申请人 NEC CORP 发明人 KATO HIROSHI
分类号 H01L29/73;H01L21/331;H01L29/417;H01L29/732;(IPC1-7):H01L21/331 主分类号 H01L29/73
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