TYPE II INTERBAND HETEROSTRUCTURE BACKWARD DIODES

摘要

A backward diode including a heterostructure consisting of a first layer of InAs (302) and second layer of GaSb or InGaSb (304) with an interface layer (300) consisting of an aluminium antimonide compound is presented. It is also disclosed that the presence of AlSb in the interface enhances the highly desirable characteristic of nonlinear current-voltage (I-V) curve near zero bias. The backward diode is useful in radio frequency detection and mixing. The interface layer (300) may be one or more layers in thickness, and may also have a continuously graded AIGaSb layer with a varying A1 concentration in order to enhance the nonlinear I-V curve characteristic near zero bias.