| 摘要 |
Processes are disclosed which facilitate improved high density memory circuitry, most preferably dynamic random access memory (DRAM) circuitry. In accordance with aspects of the invention, considerably greater numbers of die sites per wafer are achieved for 6 inch, 8 inch and 12 inch wafers for 4M, 16M, 64M and 256M integration levels. Further, a semiconductor memory device includes, i) a plurality of functional and operably addressable memory cells arranged in multiple memory arrays formed on a semiconductor die; and ii) circuitry formed on the semiconductor die permitting data to be written to and read from one or more of the memory cells, at least one of the memory arrays containing at least 100 square microns of continuous die surface area having at least 170 of the functional and operably addressable memory cells.
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