| 摘要 |
<p>A radiation-assisted electrochemical etching apparatus (10) comprises an etching bath (12) for supporting an n-type silicon wafer (20) with its one side (32) in contact with hydrofluoric acid (14); an electrode (28) placed in the hydrofluoric acid; a power supply (30) including a positive plate connected with the silicon wafer and a negative plate connected with the electrode; and a lighting unit (52) including a light source (56) to illuminate the other side (38) of the silicon wafer. The lighting unit illuminates the other side of the silicon wafer at the brightness of greater than 10 mW/cm2. The maximum to minimum brightness ratio on the other side of the silicon wafer is less than 1.69. The etching apparatus allows pores and trenches of desired shape and size to be formed in the surface of a silicon wafer greater than 3 inches in diameter.</p> |
