| 摘要 |
Light emitting semiconductor element comprises a number of layers consisting of elements of groups II and VI on a substrate, preferably made from InP, and which include a p-doped covering layer (2) and an n-doped covering layer (4) with a active layer (3) between them. The active later forms a quantum well structure. The p-doped covering layer and the n-doped covering layer have different chemical compositions. The lattice constant of the active layer is less than the lattice constants of the neighboring layers. Preferred Features: The p-doped layer is made from Zn, Mg, Se or Te. The n-doped layer is made from Zn, Mg, Cd or Se. The active layer is made from Zn, Cd or Se. The p-doped layer additionally contains Be and/or Cd.
|
