| 摘要 |
A semiconductor laser apparatus comprises a semiconductor laser chip disposed on a base through an electrode area, wherein the electrode area comprises at least a first electrode layer having no opening and a second electrode layer having an opening from the semiconductor laser chip side, the second electrode layer is formed by materials different from those of the first electrode layer and the opening of the second electrode layer is shaped in such a manner as to be able to observe a light emitting portion of said semiconductor laser chip by etching the first electrode layer using the second electrode layer as a mask. A semiconductor laser apparatus comprises a first and a second electrode areas on the upper surface and the lower surface of the semiconductor laser chip, wherein both the first and the second electrode areas comprise at least the first electrode layer having no opening and the second electrode layer having the opening from the semiconductor laser chip side.
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