发明名称 |
Solid state imaging device for achieving enhanced zooming characteristics and method of making the same |
摘要 |
A barrier area is located adjacent a horizontal transfer area and spaced from a field insulating area. The barrier area includes an insulating layer and a conductor extending from the horizontal transfer layer over the surface of a semiconductor substrate, a barrier layer of a second conductivity type formed under the surface of the semiconductor substrate and adjacent a first impurity layer of a first conductivity type of the horizontal transfer area, and a second impurity layer extending from the horizontal transfer area and formed under the barrier layer. A discharge area is located between the barrier area and the field insulating area. The discharge area includes a field insulating layer interposed between the insulating layer and the conductor extending from the barrier layer over the surface of the semiconductor substrate, and a discharge layer of the first conductivity type formed under the surface of the semiconductor substrate and adjacent the barrier layer of the barrier area over the surface layer. An impurity concentration of the discharge layer is greater than that of the first impurity layer.
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申请公布号 |
US2001045576(A1) |
申请公布日期 |
2001.11.29 |
申请号 |
US20010862425 |
申请日期 |
2001.05.23 |
申请人 |
JUNG SANG-IL;LEE JUN-TAEK |
发明人 |
JUNG SANG-IL;LEE JUN-TAEK |
分类号 |
H01L27/148;H04N5/335;H04N5/359;H04N5/369;H04N5/3722;(IPC1-7):H01L21/00;H01L21/339;H01L29/768 |
主分类号 |
H01L27/148 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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