发明名称 Structured deposition of conductive polymer on conducting or insulating substrate, useful for microelectronic device e.g. transistor, involves forming thin, structured adhesion-promoting layer then polymer layer by oxidation of monomer
摘要 Structured deposition of conductive polymer on a silicon (Si), Si dioxide, metal, alloy or oxide, quartz, ceramic, polymer or paper substrate comprises: (i) giving surface a thin, covalently bound layer (I) of molecules (A) with adhesive group and head group coupled by an aryl or alkyl spacer; then (ii) forming a structured polymer layer, firmly adhering (I), by treatment with an oxidant forming polymer with molecules (B). Structured deposition of conductive polymer on a silicon (Si), Si dioxide (SiO2), metal, alloy or oxide, quartz, ceramic, polymer or paper substrate comprises: (i) giving the surface a thin, structured, adhesion promoting, covalently bound layer (I) of molecules (A) with an adhesive group and a head group coupled by an aryl or alkyl spacer with a length of 0-30 methylene units; then (ii) forming a structured polymer layer, adhering firmly to (I), by treatment with an oxidant forming polymer with molecules (B).
申请公布号 DE10025522(A1) 申请公布日期 2001.11.29
申请号 DE20001025522 申请日期 2000.05.18
申请人 TECHNISCHE UNIVERSITAET DRESDEN 发明人 WOLTER, MAREIKE;FERSE, DIRK;PLIETH, WALDFRIED;ADLER, HANS-JUERGEN P.
分类号 C03C17/34;G03F7/027;G03F7/16;H01L51/00;H01L51/30;H01L51/40;(IPC1-7):B05D7/24;B05D5/00;C04B41/89 主分类号 C03C17/34
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