| 摘要 |
<p>There is provided a surface alloyed component which comprises a base alloy with a diffusion barrier layer enriched in silicon and chromium being provided adjacent thereto. An enrichment pool layer is created adjacent the diffusion barrier and contains silicon and chromium and optionally titanium or aluminum. The method comprises depositing a surface alloy on the base alloy at a temperature in the range of 400 to 1000 °C and heat treating the surface alloy at a ramp temperature rate of at least 5 °C/minute, preferably 10 to 20 °C/minute, to a desired maximum temperature at which the surface alloyed component is maintained for a time sufficient to provide the enrichment pool or the enrichment pool with a diffusion barrier layer. A reactive gas treatment may be used to generate a replenishable protective oxide scale of alumina or chromia on the outermost surface of the surface alloyed component.</p> |
