Production of a photoelectrically active compound semiconductor layer used for a thin layer solar cell comprises forming inserting an alkali metal dopant amount

摘要

Production of a photoelectrically active compound semiconductor layer comprises forming a part of the layer in a vaporizing step; and then inserting an alkali metal dopant amount by co-vaporization of a corresponding alkali metal material into the layer during vaporizing. Preferred Features: The alkali metal is sodium. The corresponding alkali metal material is sodium, Na2Se, Na2S or NaF. The alkali metal material co-vaporization rate is controlled to a doping concentration of up to 10<18> cm<-3>. The compound semiconductor layer is formed on the substrate held at not more than 480, preferably not more than 450 deg C during vaporization.