| 摘要 |
<p>A reflecting layer (10) including an extension portion (10a) provided near a sapphire substrate (11) around the side wall (21a) of a light-emitting device is formed on the back (substrate surface (11b)) of the sapphire substrate (11). As a result, the adhesion of the portion of the reflecting layer (10) near the periphery of the reflecting layer forming surface (substrate surface (11b)) to the substrate is greatly enhanced thanks to the formation of the extension portion (10a), so that unlike the conventional type, the reflecting layer (10) does not separate from the substrate from the periphery of the reflecting layer forming surface. Consequently even if a step of bonding an adhesive sheet to the reflecting layer (10) to fix the light-emitting device (100) to the adhesive sheet is provided, no defective device with the reflecting layer separated is produced. Therefore the quality and productivity of the semiconductor light-emitting device (100) having a reflecting layer (10) for improving the luminous efficiency can be significantly improved. A short-circuit preventive groove for restricting more extension than necessary of the reflecting layer (10) may be provided in the side wall (21a).</p> |
