| 摘要 |
The steps of forming the a-C: H layer and etching the a-C: H layer are carried out in the same apparatus. The step of applying and structuring the photo lacquer layer is used simultaneously to the structuring of the a-C: H coating of the wafer and to cleaning the plasma reactor. Production of a power diode comprises forming an a-C: H layer by plasma deposition on an oxide-free semiconductor surface, in which the self bias voltage is adjusted to 700-1000 V and the temperature of the wafer is 140-180 deg C; applying and structuring a photo lacquer layer of thickness 2-8 microns m on the a-C: H layer; etching the a-C: H layer in an oxygen-containing plasma at a self bias voltage of 120-700 V, where the photo lacquer layer remains in a diluted form; applying and structuring a metallization layer of thickness 4-8 microns m; and tempering the wafer at 360-400 deg C to achieve good adhesion of the metallization layer. The steps of forming the a-C: H layer and etching the a-C: H layer are carried out in the same apparatus. The step of applying and structuring the photo lacquer layer is used simultaneously to the structuring of the a-C: H coating of the wafer and to cleaning the plasma reactor. |
