发明名称 Charge Pump Circuit
摘要 The present invention provides a charge pump circuit capable of operating at a high speed with a low power source voltage and increasing the synchronization processing speed. The charge pump circuit comprises: a first switch circuit 15 connected between a first input node 12 through which a first signal CPin1 is input and a base of an NPN transistor Q4, for controlling the NPN transistor Q4 in response to the first signal CPin1; and a second switch circuit 16 connected between a second input node 13 and a base of an NPN transistor Q9, for controlling the NPN transistor Q9 in response to a second signal CPin2. The transistors Q4 and Q9, and transistors contained in the first and the second switch circuits 15 and 16 are all NPN transistors.
申请公布号 US2001045850(A1) 申请公布日期 2001.11.29
申请号 US20000494331 申请日期 2000.01.28
申请人 KURODA HIDEHIKO 发明人 KURODA HIDEHIKO
分类号 H03L7/093;H03L7/089;(IPC1-7):H03L7/06 主分类号 H03L7/093
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