发明名称 |
Semiconductor component having field-shaping regions |
摘要 |
A semiconductor element has a semiconductor body of a first conductivity type. The semiconductor body has a zone of a second conductivity type embedded. Further regions of the second conductivity type surround the zone of the second conductivity type like a well. The further regions are interrupted in at least one location by a channel that is formed by the semiconductor body. The further regions are doped with a doping concentration that is high enough so that the further regions are not completely depleted of charge carriers when the semiconductor element is revere-biased.
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申请公布号 |
US2001045567(A1) |
申请公布日期 |
2001.11.29 |
申请号 |
US20010816927 |
申请日期 |
2001.03.23 |
申请人 |
AUERBACH FRANZ;TIHANYI JENOE;BRUNNER HEINRICH |
发明人 |
AUERBACH FRANZ;TIHANYI JENOE;BRUNNER HEINRICH |
分类号 |
H01L29/744;H01L29/06;H01L29/78;(IPC1-7):H01L29/74 |
主分类号 |
H01L29/744 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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