| 摘要 |
A method of forming a bismuth-containing material layer on a substrate (24), comprising bubbler delivery or liquid delivery vaporization of a bismuth amide source reagent to form a bismuth containing source vapor, and introducing the bismuth-containing source vapor to a CVD chamber (22) to form the bismuth-containing material layer on the substrate. The bismuth amide source reagent may include a bismuth amide compound of the formula BiL1xL2y(NR1R2)zwherein: Z is an integer of from 1 to 3; x + y + z = 3; each of L1and L2is independently selected from C1-C4alkyl, C1-C4alkoxide, beta-diketonate, cyclic amido, cyclic trisalkoxoamine and C6-C10aryl; and each of R1and R2is independently selected from C1- C8alkyl, C1-C8 alkoxy, C6-C8cycloalkyl, C6-C10aryl, C1- C4carboxyl, and SiR3 3, wherein each R3is independently selected from H and C1-C4alkyl. Bismuth-containing films of the invention may be utilized in the construction of spatial light modulator devices (50) comprising a BSO layer (54) deposited on a substrate (52), and an aluminum-tantalum-oxide (ATO) insulator layer (56) on the BSO layer. |
