| 摘要 |
A method of producing a solar cell device comprises forming a transparent oxide electrode (12) on the surface of an insulating substrate (10), cleaning the surface of the insulating substrate (10) and the surface of the transparent oxide electrode (12) with a halogen gas having a saturated vapor pressure higher than that of the etching gas used for forming the transparent oxide electrode (12), forming a surface treatment layer (14), a silicon nitride film (16), a p-type semiconductor layer (18), a buffer layer (20), an intrinsic layer (22), an n-type semiconductor layer (24), a metal electrode (26) in order of mention, thus forming a multilayer structure. Because of the cleaning step, the surfaces of the insulating substrate (10) and the transparent oxide electrode (12) are so clean that the transparency is high and a desired light transmittance is achieved. |
