发明名称 |
Method for manufacturing semiconductor device having trench filled with polysilicon |
摘要 |
First, a trench of a semiconductor substrate is filled with a polysilicon film deposited on the surface of the semiconductor substrate. A selective thin film having etching selectivity with respect to the polysilicon film is formed on the polysilicon film. Then, the selective thin film is etched (etched back) so that a part of the selective thin film remains in a depression of the polysilicon film, as a self-aligning mask. The polysilicon film is further etched with the self-aligning mask, thereby forming a polysilicon embedded layer in the trench with a flat surface.
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申请公布号 |
US2001046762(A1) |
申请公布日期 |
2001.11.29 |
申请号 |
US20010852690 |
申请日期 |
2001.05.11 |
申请人 |
ITO HIROYASU;ARAKAWA TAKAFUMI;KATO MASATOSHI |
发明人 |
ITO HIROYASU;ARAKAWA TAKAFUMI;KATO MASATOSHI |
分类号 |
H01L21/76;H01L21/306;H01L21/3105;H01L21/336;H01L21/763;H01L21/8242;H01L29/78;(IPC1-7):H01L21/76;H01L21/320;H01L21/476;H01L21/44;H01L21/824 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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