发明名称 |
Signal potential conversion circuit |
摘要 |
In a signal potential conversion circuit of a DRAM, a first P channel MOS transistor for charging a first node is connected in parallel with a second P channel MOS transistor and the second P channel MOS transistor is turned on in a pulse manner in response to a rising edge of an input signal. Further, the first P channel MOS transistor has its current drive ability defined to be approximately one-tenth of that of an N channel MOS transistor for discharging the first node. Accordingly, each of the first node and a second node can be charged and discharged quickly to enable conversion of a signal potential to be accomplished speedily.
|
申请公布号 |
US2001045859(A1) |
申请公布日期 |
2001.11.29 |
申请号 |
US20010793997 |
申请日期 |
2001.02.28 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
TSUJI TAKAHARU;TOMISHIMA SHIGEKI;OOISHI TSUKASA |
分类号 |
H03K19/017;H03K19/0185;(IPC1-7):H03L5/00 |
主分类号 |
H03K19/017 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|