HIGH-VOLTAGE SILICON DIODE

摘要

A plurality of optimized diode chips are connected in series with each other to provide a high-voltage silicon diode rectifying device. Each chip has an improved withstand voltage and inverse surge resistance which improves the overall usefulness and efficiency of high-voltage silicon diodes. This invention also reduces costs by requiring fewer individual diode chips. The specific resistance of the (n)-type silicon substrate is in a critical range of between 20 to 50 OMEGAcm. The diffusion depth of the p+ anode layer is in a critical range of between 30 to 200 mum. The thickness of the n- base layer is 0.54x(rho.Vsr)½ or greater. In another embodiment, the specific resistance of the silicon substrate is in the range of 32 to 40 OMEGAcm, and diffusion depth of the p+ anode layer is in the range of 70 to 200 mum. In yet another embodiment, a cathode layer is diffused on the semiconductor base material. In another embodiment, a (p)-type semiconductor base material is used to make the diode chips.