| 摘要 |
A semiconductor structure, e.g., a high electron mobility transistor structure, is formed by using metamorphic growth and strain compensation. The structure includes a substrate (12), a graded layer (14) over the substrate, a first donor/barrier layer (18) over the graded layer, and a channel layer (24) over the first donor/barrier layer. The substrate (12) has a substrate lattice constant, and the graded layer (14) has a graded lattice constant. The graded layer (14) has a first lattice constant near a bottom of the graded layer substantially equal to the substrate lattice constant and a second lattice constant near a top of the graded layer different than the first lattice constant. The first donor/barrier (18) layer has a third lattice constant, and the channel layer (24) has a fourth lattice constant. The second lattice constant is intermediate the third and fourth lattice constants. |
