发明名称 |
QUANTUM SIZE EFFECT TYPE MICRO ELECTRON GUN AND FLAT DISPLAY UNIT USING IT AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
A quantum size effect type micro electron gun provided for each pixel in which electrons are derived easily from a semiconductor utilizing a quantum size effect, a thin image display unit having high quantum efficiency and luminance utilizing that electron gun, and a method for manufacturing the same. Conduction electrons of an n-type semiconductor substrate (2) are accelerated by a field without subjected to phonon scattering in the layer (4) of quantum size effect fine particles (3) formed on the surface of the n-type semiconductor substrate (2) to have energy higher than the work function of an electrode (5) when arriving at an electrode (5) before being emitted into vacuum. The quantum size effect fine particle (3) is provided, on the surface thereof, with semiconductor microcrystals of nano order having an energy level of electrons dispersed to such an extent as causing no phonon scattering, and an insulator thin enough to permit tunneling of electrons.
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申请公布号 |
WO0191155(A1) |
申请公布日期 |
2001.11.29 |
申请号 |
WO2001JP04221 |
申请日期 |
2001.05.21 |
申请人 |
JAPAN SCIENCE AND TECHNOLOGY CORPORATION;ODA, SHUNRI;ZHAO, XINWEI;NISHIGUCHI, KATSUHIKO |
发明人 |
ODA, SHUNRI;ZHAO, XINWEI;NISHIGUCHI, KATSUHIKO |
分类号 |
H01J1/312;H01J9/02;H01J29/04;H01J31/12;H01L21/203;H01L21/205;H01L29/66;H01L29/80;(IPC1-7):H01J1/312 |
主分类号 |
H01J1/312 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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