Device for anisotropically etching a substrate has an aperture arranged between the plasma source and the substrate with openings arranged in such a way that the ions from the plasma vertically hit the surface of the substrate

摘要

Device for anisotropically etching a substrate comprises a plasma source for generating a high frequency electromagnetic alternating field, a reactor for producing a plasma from reactive particles produced from the action of the alternating field on a reactive gas or reactive gas mixture and a substrate electrode for accelerating an ion stream contained in the plasma onto the substrate. An aperture (14) is arranged between the plasma source and the substrate and has openings (32, 33, 33') arranged in such a way that the ions from the plasma vertically hit the surface of the substrate. Preferred Features: An effective surface for electron/ion recombination is assigned to the aperture and is formed as a cylindrical component on the aperture.