METHOD FOR FORMING LINES IN SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming lines in a semiconductor device is provided to be capable of improving EM(Electro-Migration) resistibility by using Al-Cu alloy. CONSTITUTION: A barrier layer(22) is formed on a semiconductor substrate(21). A pure aluminum film(23) is deposited on the barrier layer(22). An Al-Cu alloy(24) is formed on the pure aluminum film(23), wherein the composition rate of the copper is 5-52 weight percent and the composition rate of the aluminum is 48-95 weight percent. Copper in the Al-Cu alloy(24) is then diffused into the pure aluminum film(23) by annealing.