发明名称 |
Semiconductor device and process of manufacturing the same |
摘要 |
A semiconductor device comprises a first insulating film, a wiring layer and a second insulating film formed in this order on a semiconductor substrate, the second insulating film being provided with one or more through holes formed onto the wiring layer, wherein the wiring layer is electrically isolated by the first insulating film and the second insulating film at a region other than a region where the through holes are formed, and a ratio between a total of a bottom area of the through holes formed onto the wiring layer and a top surface area of the wiring layer is 1:300 to 10,000.
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申请公布号 |
US2001045667(A1) |
申请公布日期 |
2001.11.29 |
申请号 |
US20010836554 |
申请日期 |
2001.04.18 |
申请人 |
YAMAUCHI HIROSHI;SATOH MASAYUKI |
发明人 |
YAMAUCHI HIROSHI;SATOH MASAYUKI |
分类号 |
H01L21/302;H01L21/02;H01L21/3065;H01L21/66;H01L21/768;(IPC1-7):H01L21/476;H01L21/44;H01L29/40 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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