发明名称 CELL ARCHITECTURE WITH LOCAL INTERCONNECT AND METHOD FOR MAKING SAME
摘要 Disclosed is a semiconductor standard cell architecture with local interconnect. The standard cell architecture includes a semiconductor substrate having diffusion regions that are designated for source and drain regions of a functional circuit. The standard cell also includes a polysilicon layer that is patterned to define gate electrodes and interconnections of the semiconductor standard cell architecture. In addition, the standard cell includes a local interconnect metallization layer that is patterned into a plurality of local interconnect metallization lines that are configured to be disposed over the semiconductor substrate and are further configured to substantially interconnect the source and drain regions and gate electrodes to define the functional circuit. The plurality of local interconnect metallization lines are further designed to incorporate local interconnect metallization pins that are connection points for interconnecting the functional circuit to another functional circuit. In a preferred embodiment, the local interconnect metallization lines are configured to be fabricated from a higher resistivity metal having a resistivity that is greater than aluminum containing metals.
申请公布号 US2001045571(A1) 申请公布日期 2001.11.29
申请号 US19980159264 申请日期 1998.09.23
申请人 GANDHI DHRUMIL;LIM LYNDON C. 发明人 GANDHI DHRUMIL;LIM LYNDON C.
分类号 H01L21/768;H01L23/532;H01L27/02;(IPC1-7):H01L27/10 主分类号 H01L21/768
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