发明名称 |
Pattern-forming method using photomask, and pattern-forming apparatus |
摘要 |
The method of the present invention is a method of forming a pattern by using a photomask having both a minute aperture where the main component of a transmitted light is an evanescent light and an aperture where the main component of a transmitted light is a propagating light, comprising the steps of forming a photoresist with a film thickness equal to or smaller than a width of the minute aperture on a substrate to be processed, and exposing the photoresist by an incident light for exposure. The apparatus of the present invention is an apparatus for forming a pattern by using a photomask having both a minute aperture where the main component of a transmitted light is an evanescent light and an aperture where the main component of a transmitted light is a propagating light, comprising a sample stand for placing a substrate to be processed on which a photoresist with a film thickness equal to or smaller than a width of the minute aperture is formed, a stage for placing the photomask, a light source for generating light for exposure, and an unit for controlling a distance between the substrate to be processed and the photomask. |
申请公布号 |
US2001046719(A1) |
申请公布日期 |
2001.11.29 |
申请号 |
US20010781331 |
申请日期 |
2001.02.13 |
申请人 |
YAMAGUCHI TAKAKO;KURODA RYO |
发明人 |
YAMAGUCHI TAKAKO;KURODA RYO |
分类号 |
G03F1/08;G03F1/14;G03F1/60;G03F1/70;G03F7/16;G03F7/20;H01L21/027;(IPC1-7):H01L21/00 |
主分类号 |
G03F1/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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