发明名称 |
Toroidal plasma source for plasma processing |
摘要 |
<p>A toroidal plasma source (28) within a substrate processing chamber (10). The toroidal plasma source forms a poloidal plasma with theta symmetry. The poloidal plasma current is essentially parallel to a surface of the plasma generating structure, thus reducing sputtering erosion of the inner walls. The plasma current is similarly essentially parallel to a process surface (32) of a substrate (34) within the chamber. In a further embodiment, a shaped member (66) between the substrate and the plasma source controls the plasma density in a selected fashion to enhance plasma processing uniformity. <IMAGE></p> |
申请公布号 |
EP1158565(A2) |
申请公布日期 |
2001.11.28 |
申请号 |
EP20010111697 |
申请日期 |
2001.05.14 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
COX, MICHAEL S.;LAI, CANFENG;MAJEWSKI, ROBERT B.;WANAMAKER, DAVID P.;LANE, CHRISTOPER T.;LOEWENHARDT, PETER;SHAMOUILIAN, SAM;PARKS, JOHN |
分类号 |
C23C16/505;H05H1/46;B01J19/08;C23F4/00;H01J37/32;H01L21/302;H01L21/3065;H01L21/31;H05H1/00;(IPC1-7):H01J37/32 |
主分类号 |
C23C16/505 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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