发明名称 Toroidal plasma source for plasma processing
摘要 <p>A toroidal plasma source (28) within a substrate processing chamber (10). The toroidal plasma source forms a poloidal plasma with theta symmetry. The poloidal plasma current is essentially parallel to a surface of the plasma generating structure, thus reducing sputtering erosion of the inner walls. The plasma current is similarly essentially parallel to a process surface (32) of a substrate (34) within the chamber. In a further embodiment, a shaped member (66) between the substrate and the plasma source controls the plasma density in a selected fashion to enhance plasma processing uniformity. &lt;IMAGE&gt;</p>
申请公布号 EP1158565(A2) 申请公布日期 2001.11.28
申请号 EP20010111697 申请日期 2001.05.14
申请人 APPLIED MATERIALS, INC. 发明人 COX, MICHAEL S.;LAI, CANFENG;MAJEWSKI, ROBERT B.;WANAMAKER, DAVID P.;LANE, CHRISTOPER T.;LOEWENHARDT, PETER;SHAMOUILIAN, SAM;PARKS, JOHN
分类号 C23C16/505;H05H1/46;B01J19/08;C23F4/00;H01J37/32;H01L21/302;H01L21/3065;H01L21/31;H05H1/00;(IPC1-7):H01J37/32 主分类号 C23C16/505
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