发明名称 |
Surface acoustic wave device and manufacturing method therefor |
摘要 |
In a method of manufacturing a surface acoustic wave device using a Shear Horizontal type surface acoustic wave, at least one interdigital transducer (IDT) is made of a material having a larger mass-load effect than that of aluminum. The metallization ratio of the IDT and the normalization film thickness h/lambda of the IDT are controlled such that ripple caused by a transversal mode wave is about 1.5 dB or less, where "h" indicates the film thickness of the electrodes and "h" indicates the wavelength of a surface acoustic wave. |
申请公布号 |
GB0124034(D0) |
申请公布日期 |
2001.11.28 |
申请号 |
GB20010024034 |
申请日期 |
2001.10.05 |
申请人 |
MURATA MANUFACTURING CO. LTD. |
发明人 |
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分类号 |
H03H9/145;H02N2/00;H03H3/08;H03H9/00;H03H9/25;H03H9/64 |
主分类号 |
H03H9/145 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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