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发明名称
EPITAXIAL ALUMINIUM-GALLIUM NITRIDE SEMICONDUCTOR SUBSTRATE
摘要
申请公布号
KR20010105305(A)
申请公布日期
2001.11.28
申请号
KR1020017006606
申请日期
2001.05.26
申请人
发明人
分类号
H01L21/86
主分类号
H01L21/86
代理机构
代理人
主权项
地址
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