| 摘要 |
A process for maintaining a semiconductor substrate layer (e.g. a TiN, W or TEOS) deposition equipment chamber in a preconditioned and low particulate state between successive layer depositions. The first step is determining that the equipment chamber has been in an idle state for more than a first predetermined time period. In the second step, the equipment chamber pressure is reduced to its base pressure in the absence of gas flow, while maintaining the equipment chamber at a first predetermined temperature. In the third step, the equipment chamber is maintained at a second predetermined temperature for a second predetermined time period. During this step, the equipment chamber pressure is held at a first predetermined pressure, while an inert gas is discharged at a first predetermined inert gas flow rate through the equipment chamber. The pressure, time period and gas flow rate in this step are selected in such a way that adequate and thorough heating (i.e. preconditioning) of the equipment chamber and any associated hardware is provided. During the fourth step, the equipment chamber is purged with a inert gas(s) at a second predetermined inert gas flow rate that is greater than the first predetermined inert gas flow rate, to dislodge particulates within the equipment chamber, while maintaining the equipment chamber at a third predetermined temperature. The process sequence from the second step to the fourth step is repeated a predetermined number of times, typically 4 to 6 times. The equipment chamber is then returned to the idle state.
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