| 发明名称 |
Method for forming an arsenic doped dielectric layer |
| 摘要 |
A method of forming an arsenic doped oxide layer in a process chamber is disclosed. The method comprises the steps of: setting the process chamber to a temperature of approximately 400-500° C. and a pressure of about 40-250 torr; flowing tetraethylorthosilicate (TEOS) into the process chamber; flowing triethylarsenate (TEAS or TEASAT) into the process chamber; and flowing ozone into the process chamber.
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| 申请公布号 |
US6323137(B1) |
申请公布日期 |
2001.11.27 |
| 申请号 |
US20000518233 |
申请日期 |
2000.03.03 |
| 申请人 |
PROMOS TECHNOLOGIES |
发明人 |
KU FENG-WEI;KU CHIA-LIN |
| 分类号 |
C23C16/40;H01L21/316;(IPC1-7):H01L21/31;H01L21/469 |
主分类号 |
C23C16/40 |
| 代理机构 |
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