Manufacturing method of a semiconductor device

摘要

After a bottom electrode 30 of a capacitor is formed, a nitride film as an insulating film 32 of the capacitor is formed on the bottom electrode 30 by CVD. Then, the insulating film 32 is wet-oxidized at a temperature in a range of 700° C. to 760° C. Finally, a top electrode 34 of the capacitor is formed on the insulating film 32. The insulating film 32 forming step includes a substep of increasing the temperature of a silicon wafer to a CVD reaction temperature in an ammonia atmosphere.