| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for depositing a silicon film uniform in the distribution of film thickness. SOLUTION: In the method in which gaseous H2 16 is fed to a glass tube set with an antenna 15 for exciting helicon waves, further, gaseous SiH4 is fed to the space between the antenna 15 and a substrate 9, the antenna 15 for exciting helicon waves is set in the ununiform magnetic field, the substrate 9 is set inside cusp magnetic field, and a silicon film is deposited by helicon wave plasma CVD method, the size of the glass tube 20 is set in such a manner that the distribution in the radial direction of plasma electron density is made to be a two crest form, and the distribution of electron density is changed from a crest form into a two crest form.
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