| 摘要 |
A method for forming a thin film resistor. There is first provided an insulator substrate. There is then formed upon the insulator substrate a blanket thin film resistive layer. There is then removed through a non-photolithographic etching method a portion of the blanket thin film resistive layer to form upon the substrate a patterned thin film resistive layer. Finally, there is then formed through a non-photolithographic printing method upon the patterned thin film resistive layer a patterned conductor lead layer. Alternatively, the portion of the blanket thin film resistive layer may be removed to form the patterned thin film resistive layer after the patterned conductor lead layer is formed upon the blanket thin film resistive layer. Additionally, the insulator substrate may be scribed before or after forming the blanket thin film resistive layer upon the insulator substrate to form a contiguous substrate chip upon which is formed the patterned thin film resistive layer and the patterned conductor lead layer, thus forming a contiguous thin film resistor chip within the insulator substrate. The contiguous thin film resistor chip may then be parted from the insulator substrate to form a discrete thin film resistor chip through physical fracture without cutting the insulator substrate.
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