| 摘要 |
The formation of a spacer for precise salicide formation is disclosed. In one embodiment, a method includes four steps. In the first step, at least one first spacer is formed, where each spacer is adjacent to an edge of a gate on a substrate and has a triangular geometry. In the second step, an ion implantation is applied to form a graded lightly doped region within the substrate underneath each spacer, the region corresponding to the triangular geometry of the spacer. In the third step, at least one second spacer is formed, where each second spacer overlaps a corresponding first spacer. In the fourth step, a metal silicide within the substrate is formed immediately adjacent to each second spacer.
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