发明名称 Semiconductor memory device capable of recovering defective bit and a system having the same semiconductor memory device
摘要 The present invention provides a semiconductor memory device capable of simplifying a test process for a memory circuit containing a nonvolatile memory while reducing an overhead of its chip area and a system incorporating the same semiconductor memory device. This semiconductor memory device comprises a proper memory cell array, a redundant memory cell with which the defective memory cell in the proper memory cell array is to be replaced, a register for holding defect information of the defective memory cell detected in the proper memory cell array temporarily; a control circuit for replacing the defective memory cell with the redundant memory cell according to the defect information of the memory cell held in the register, a redundant program array which is an expansion of the same memory cell as the proper memory cell array while sharing a column with the proper memory cell array so as to store defect information in the same column as the defective memory cell, a writing circuit for writing defect information held in the register into the redundant program array, and a reading circuit for reading the defect information stored in the redundant program array into the register.
申请公布号 US6324106(B2) 申请公布日期 2001.11.27
申请号 US20010860911 申请日期 2001.05.21
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 URAKAWA YUKIHIRO
分类号 G11C11/413;G06F12/16;G11C11/401;G11C16/06;G11C29/00;G11C29/04;H01L27/10;(IPC1-7):G11C7/00 主分类号 G11C11/413
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