METHOD FOR PRODUCING SINGLE CRYSTAL AND ITS PRODUCING DEVICE

摘要

PROBLEM TO BE SOLVED: To produce a high quality single crystal of semiconductor by the MCZ method. SOLUTION: This method for producing the single crystal is equipped with a process of making a seed crystal 34 in contact with a semiconductor molten liquid 21 in a quartz crucible 3, a process of growing a single crystal 35 at the seed crystal 34 by pulling up the seed crystal 34 from the semiconductor molten liquid 21 and also applying a cusp magnetic field so that the position of the boundary of the seed crystal 34 making in contact with the semiconductor molten liquid 21 and the liquid surface 21a of the semiconductor molten liquid 21 agrees almost with the central point 151 of zero magnetic field, and a process of moving the central point 151 along with the growing direction of the single crystal 35 so that the position of the boundary of the seed crystal 34 making in contact with the semiconductor molten liquid 21 and the liquid surface 21a of the semiconductor molten liquid 21 agrees almost with the central point 151 of zero magnetic field in accordance with the lowering of the liquid surface 21a of the semiconductor molten liquid 21 in a state of keeping the position of the quartz crucible at almost constant.