发明名称 Semiconductor memory device using a plurality of semiconductor memory chips mounted in one system and a semiconductor memory system using a plurality of semiconductor memory devices
摘要 A semiconductor memory device has an address input circuit system capable of specifying a virtual memory space having a capacity larger than the actual storage capacity and a decoder system and sets the output terminal of a data output circuit system into a high impedance state when an address other than the previously specified addresses for the real memory space is specified. A plurality of semiconductor memory devices described above are used to construct a semiconductor memory system by commonly connecting corresponding ones of all of the input/output signal pins in parallel.
申请公布号 US6324114(B1) 申请公布日期 2001.11.27
申请号 US19980175446 申请日期 1998.10.20
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 HIMENO TOSHIHIKO
分类号 G11C11/41;G06F12/02;G06F12/06;G11C11/401;G11C16/02;H01L21/8247;H01L27/10;H01L27/115;(IPC1-7):G11C8/00 主分类号 G11C11/41
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