| 发明名称 |
Post plasma ashing wafer cleaning formulation |
| 摘要 |
A semiconductor wafer cleaning formulation for use in post plasma ashing semiconductor fabrication comprising the following components in the percentage by weight ranges shown:In the preferred embodiment the chelating agent is catechol (1,2-dihydroxybenzene) and the polar organic solvent is gamma butyrolactone (BLO).
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| 申请公布号 |
US6323168(B1) |
申请公布日期 |
2001.11.27 |
| 申请号 |
US19960675500 |
申请日期 |
1996.07.03 |
| 申请人 |
ADVANCED TECHNOLOGY MATERIALS, INC. |
发明人 |
KLOFFENSTEIN THOMAS J.;FINE DANIEL N. |
| 分类号 |
C11D7/26;C11D7/28;C11D7/32;C11D7/34;C11D7/50;C11D11/00;G03F7/42;H01L21/02;H01L21/306;H01L21/311;H01L21/3213;(IPC1-7):C11D3/20 |
主分类号 |
C11D7/26 |
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